Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

• Main Authors: Ang, Diing Shenp, Zhang, H. Z., Gu, C. J., Yew, K. S., Wang, X. P., Lo, G. Q.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/103797; http://hdl.handle.net/10220/24557
• Institution: Nanyang Technological University

The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfOx/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfOx/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of...