InP based quantum dots for long wavelength emissions and their post-growth bandgap tuning

InP based quantum dots for long wavelength emissions and their post-growth bandgap tuning

InP based III–V compound semiconductor quantum dot (QD) structures emitting at mid-infrared range were grown by using metal-organic chemical vapor deposition (MOCVD). A two-step growth of QDs method was used to grow the QDs to improve the QDs' shape, dot density and the dot size uniformity. Emi...

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書目詳細資料
Main Authors:	Tang, Xiaohong, Yin, Zongyou
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2015
主題:	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
在線閱讀:	https://hdl.handle.net/10356/104836 http://hdl.handle.net/10220/25993
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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