A ZnTaOx based resistive switching random access memory

A ZnTaOx based resistive switching random access memory

The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such...

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Bibliographic Details
Main Authors: Zheng, K., Zhao, J. L., Leck, K. S., Teo, K. L., Yeo, E. G., Sun, X. W.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:https://hdl.handle.net/10356/104882
http://hdl.handle.net/10220/20266
http://dx.doi.org/10.1149/2.0101407ssl
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Institution: Nanyang Technological University
Language: English
Description
Summary:The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of conductive filaments in the oxide compound.

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