A ZnTaOx based resistive switching random access memory

• Main Authors: Zheng, K., Zhao, J. L., Leck, K. S., Teo, K. L., Yeo, E. G., Sun, X. W.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• Online Access: https://hdl.handle.net/10356/104882; http://hdl.handle.net/10220/20266; http://dx.doi.org/10.1149/2.0101407ssl
• Institution: Nanyang Technological University

The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such...