A ZnTaOx based resistive switching random access memory
The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/104882 http://hdl.handle.net/10220/20266 http://dx.doi.org/10.1149/2.0101407ssl |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| id |
sg-ntu-dr.10356-104882 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-1048822019-12-06T21:41:53Z A ZnTaOx based resistive switching random access memory Zheng, K. Zhao, J. L. Leck, K. S. Teo, K. L. Yeo, E. G. Sun, X. W. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of conductive filaments in the oxide compound. ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version 2014-08-14T04:07:32Z 2019-12-06T21:41:53Z 2014-08-14T04:07:32Z 2019-12-06T21:41:53Z 2014 2014 Journal Article Zheng, K., Zhao, J. L., Leck, K. S., Teo, K. L., Yeo, E. G., & Sun, X. W. (2014). A ZnTaOx Based Resistive Switching Random Access Memory. ECS Solid State Letters, 3(7), Q36-Q39. 2162-8742 https://hdl.handle.net/10356/104882 http://hdl.handle.net/10220/20266 http://dx.doi.org/10.1149/2.0101407ssl en ECS Solid State Letters © 2014 The Electrochemical Society. This paper was published in ECS Solid State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: http://dx.doi.org/10.1149/2.0101407ssl. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| country |
Singapore |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials |
| spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Zheng, K. Zhao, J. L. Leck, K. S. Teo, K. L. Yeo, E. G. Sun, X. W. A ZnTaOx based resistive switching random access memory |
| description |
The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of conductive filaments in the oxide compound. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Zheng, K. Zhao, J. L. Leck, K. S. Teo, K. L. Yeo, E. G. Sun, X. W. |
| format |
Article |
| author |
Zheng, K. Zhao, J. L. Leck, K. S. Teo, K. L. Yeo, E. G. Sun, X. W. |
| author_sort |
Zheng, K. |
| title |
A ZnTaOx based resistive switching random access memory |
| title_short |
A ZnTaOx based resistive switching random access memory |
| title_full |
A ZnTaOx based resistive switching random access memory |
| title_fullStr |
A ZnTaOx based resistive switching random access memory |
| title_full_unstemmed |
A ZnTaOx based resistive switching random access memory |
| title_sort |
zntaox based resistive switching random access memory |
| publishDate |
2014 |
| url |
https://hdl.handle.net/10356/104882 http://hdl.handle.net/10220/20266 http://dx.doi.org/10.1149/2.0101407ssl |
| _version_ |
1681048715654070272 |