Electrical performance and stability of tungsten indium zinc oxide thin-film transistors
Amorphous tungsten indium zinc oxide thin film transistors (WIZO TFTs) have been prepared using radio-frequency (RF) magnetron co-sputtering system to co-sputter indium zinc oxide (IZO) and indium tungsten oxide (IWO) targets. The electrical performance parameters and positive biased stress (PBS) te...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/105563 http://hdl.handle.net/10220/48711 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Amorphous tungsten indium zinc oxide thin film transistors (WIZO TFTs) have been prepared using radio-frequency (RF) magnetron co-sputtering system to co-sputter indium zinc oxide (IZO) and indium tungsten oxide (IWO) targets. The electrical performance parameters and positive biased stress (PBS) test of the co-sputtered WIZO TFT were investigated to obtain better characteristics with regards to the IZO and IWO TFT counterparts. The co-sputtered TFT displayed high electrical performance (field effect mobility, µFE ∼ 22.30 cm2/Vs, and sub-threshold swing, SS ∼ 0.36 V/decade) and stable electrical behavior (PBS value shift, ΔVth ∼ 1.23 V) than the IZO (µFE ∼ 19.90 cm2/Vs, SS ∼ 0.46 V/decade, ΔVth ∼ 7.79 V) and IWO (conducting in nature) TFTs for its application in flexible and transparent displays. |
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