Electrical performance and stability of tungsten indium zinc oxide thin-film transistors

Electrical performance and stability of tungsten indium zinc oxide thin-film transistors

Amorphous tungsten indium zinc oxide thin film transistors (WIZO TFTs) have been prepared using radio-frequency (RF) magnetron co-sputtering system to co-sputter indium zinc oxide (IZO) and indium tungsten oxide (IWO) targets. The electrical performance parameters and positive biased stress (PBS) te...

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Main Authors: Chauhan, Ram Narayan, Tiwari, Nidhi, Shieh, Han-Ping D., Liu, Po-Tsun
Other Authors: Energy Research Institute @NTU
Format: Article
Language:English
Published: 2019
Subjects:
Semiconductor
DRNTU::Science::Physics
Sputtering
Online Access:https://hdl.handle.net/10356/105563
http://hdl.handle.net/10220/48711
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1055632020-09-26T21:45:26Z Electrical performance and stability of tungsten indium zinc oxide thin-film transistors Chauhan, Ram Narayan Tiwari, Nidhi Shieh, Han-Ping D. Liu, Po-Tsun Energy Research Institute @NTU Semiconductor DRNTU::Science::Physics Sputtering Amorphous tungsten indium zinc oxide thin film transistors (WIZO TFTs) have been prepared using radio-frequency (RF) magnetron co-sputtering system to co-sputter indium zinc oxide (IZO) and indium tungsten oxide (IWO) targets. The electrical performance parameters and positive biased stress (PBS) test of the co-sputtered WIZO TFT were investigated to obtain better characteristics with regards to the IZO and IWO TFT counterparts. The co-sputtered TFT displayed high electrical performance (field effect mobility, µFE ∼ 22.30 cm2/Vs, and sub-threshold swing, SS ∼ 0.36 V/decade) and stable electrical behavior (PBS value shift, ΔVth ∼ 1.23 V) than the IZO (µFE ∼ 19.90 cm2/Vs, SS ∼ 0.46 V/decade, ΔVth ∼ 7.79 V) and IWO (conducting in nature) TFTs for its application in flexible and transparent displays. Accepted version 2019-06-13T04:04:01Z 2019-12-06T21:53:36Z 2019-06-13T04:04:01Z 2019-12-06T21:53:36Z 2018 Journal Article Chauhan, R. N., Tiwari, N., Shieh, H.-P. D., & Liu, P.-T. (2018). Electrical performance and stability of tungsten indium zinc oxide thin-film transistors. Materials Letters, 214, 293-296. doi:10.1016/j.matlet.2017.12.020 0167-577X https://hdl.handle.net/10356/105563 http://hdl.handle.net/10220/48711 10.1016/j.matlet.2017.12.020 en Materials Letters © 2017 Elsevier B.V. All rights reserved. This paper was published in Materials Letters and is made available with permission of Elsevier B.V. 8 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Semiconductor
DRNTU::Science::Physics
Sputtering
spellingShingle Semiconductor
DRNTU::Science::Physics
Sputtering
Chauhan, Ram Narayan
Tiwari, Nidhi
Shieh, Han-Ping D.
Liu, Po-Tsun
Electrical performance and stability of tungsten indium zinc oxide thin-film transistors
description Amorphous tungsten indium zinc oxide thin film transistors (WIZO TFTs) have been prepared using radio-frequency (RF) magnetron co-sputtering system to co-sputter indium zinc oxide (IZO) and indium tungsten oxide (IWO) targets. The electrical performance parameters and positive biased stress (PBS) test of the co-sputtered WIZO TFT were investigated to obtain better characteristics with regards to the IZO and IWO TFT counterparts. The co-sputtered TFT displayed high electrical performance (field effect mobility, µFE ∼ 22.30 cm2/Vs, and sub-threshold swing, SS ∼ 0.36 V/decade) and stable electrical behavior (PBS value shift, ΔVth ∼ 1.23 V) than the IZO (µFE ∼ 19.90 cm2/Vs, SS ∼ 0.46 V/decade, ΔVth ∼ 7.79 V) and IWO (conducting in nature) TFTs for its application in flexible and transparent displays.
author2 Energy Research Institute @NTU
author_facet Energy Research Institute @NTU
Chauhan, Ram Narayan
Tiwari, Nidhi
Shieh, Han-Ping D.
Liu, Po-Tsun
format Article
author Chauhan, Ram Narayan
Tiwari, Nidhi
Shieh, Han-Ping D.
Liu, Po-Tsun
author_sort Chauhan, Ram Narayan
title Electrical performance and stability of tungsten indium zinc oxide thin-film transistors
title_short Electrical performance and stability of tungsten indium zinc oxide thin-film transistors
title_full Electrical performance and stability of tungsten indium zinc oxide thin-film transistors
title_fullStr Electrical performance and stability of tungsten indium zinc oxide thin-film transistors
title_full_unstemmed Electrical performance and stability of tungsten indium zinc oxide thin-film transistors
title_sort electrical performance and stability of tungsten indium zinc oxide thin-film transistors
publishDate 2019
url https://hdl.handle.net/10356/105563
http://hdl.handle.net/10220/48711
_version_ 1681057743153135616

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