AlN-AlN wafer bonding and its thermal characteristics

• Main Authors: Bao, Shunyu, Lee, Kwang Hong, Chong, Gang Yih, Fitzgerald, Eugene A, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electric power::Auxiliaries, applications and electric industries
• Online Access: https://hdl.handle.net/10356/106632; http://hdl.handle.net/10220/25056; http://dx.doi.org/10.1149/06405.0141ecst
• Institution: Nanyang Technological University

Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face fusion bonding of two clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially oxidized during processing. The as-bonded wafer pair is nearly void and particle free with a high bonding strength of 1263.0 mJ/m2, enabling it to withstand the subsequent process steps. In addition, the AlN-AlN bonded wafers appear to have the best heat dissipation capability when compared with other bonded wafers, which used SiO2 or Al2O3 as the bonding layer.