AlN-AlN wafer bonding and its thermal characteristics
Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face fusion bonding of two clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially oxidized...
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Main Authors: | Bao, Shunyu, Lee, Kwang Hong, Chong, Gang Yih, Fitzgerald, Eugene A, Tan, Chuan Seng |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2015
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/106632 http://hdl.handle.net/10220/25056 http://dx.doi.org/10.1149/06405.0141ecst |
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Institution: | Nanyang Technological University |
Language: | English |
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