Ion implantation in silicon to facilitate testing of photonic circuits

Ion implantation in silicon to facilitate testing of photonic circuits

In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to develop a range of optical devices that are reported in this paper. Ion impla...

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Bibliographic Details
Main Authors: Reed, Graham T., Milosevic, Milan M., Chen, Xia, Cao, Wei, Littlejohns, Callum George, Wang, Hong, Khokhar, Ali Z., Thomson, David J.
Other Authors: Eldada, Louay A.
Format: Article
Language:English
Published: 2019
Subjects:
Engineering::Electrical and electronic engineering
Grating Couplers
Ion Implantation
Online Access:https://hdl.handle.net/10356/106808
http://hdl.handle.net/10220/49652
http://dx.doi.org/10.1117/12.2252770
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Institution: Nanyang Technological University
Language: English
Description
Summary:In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to develop a range of optical devices that are reported in this paper. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore form the basis of multiple optical devices. We demonstrate the principle of a series of devices for wafers scale testing and have also implemented the ion implantation based refractive index change in integrated photonics devices for device trimming.

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