Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

• المؤلفون الرئيسيون: Arulkumaran, S., Ng, G. I., Manoj Kumar, C. M., Ranjan, K., Teo, K. L., Shoron, O. F., Rajan, S., Bin Dolmanan, S., Tripathy, S.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/107105; http://hdl.handle.net/10220/25286

A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In0.17 Al 0.83N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT...