Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In0.17 Al 0.83N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT...

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Bibliographic Details
Main Authors:	Arulkumaran, S., Ng, G. I., Manoj Kumar, C. M., Ranjan, K., Teo, K. L., Shoron, O. F., Rajan, S., Bin Dolmanan, S., Tripathy, S.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2015
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
Online Access:	https://hdl.handle.net/10356/107105 http://hdl.handle.net/10220/25286
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University
Language:	English

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