Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

• المؤلفون الرئيسيون: Gao, Yu, Gan, Chee Lip, Thompson, C. V., Sasangka, W. A.
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: AlGaN/GaN HEMTs; Leakage Current; Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/107592; http://hdl.handle.net/10220/50348

We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Scho...