Two-dimensional simulation and design of high electron mobility transistors

• Main Author: Kam, Adele Hwei Ting
• Other Authors: Yoon, Soon Fatt
• Format: Theses and Dissertations
• Language: English
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/13263
• Institution: Nanyang Technological University

The simulations are performed using the two-dimensional device simulator, MEDICI. To produce an accurate prediction of devices in this material system, the quaternary compounds formed between the GalnP and InGaAs interface needs to be accounted for. A model of these quaternary layers was incorporated into the simulation program for the first time. An analytical model was also incorporated to account for the quantal nature of electron transport in the device channel. The development of the simulation program also includes establishing a suitable device geometry and mesh, determination of bandgap energy and band alignment of materials in the device heterolayers and determination of a consistent set of variables and parameters values for the simulation setup.