Two-dimensional simulation and design of high electron mobility transistors
The simulations are performed using the two-dimensional device simulator, MEDICI. To produce an accurate prediction of devices in this material system, the quaternary compounds formed between the GalnP and InGaAs interface needs to be accounted for. A model of these quaternary layers was incorporate...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2008
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| 在線閱讀: | http://hdl.handle.net/10356/13263 |
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| 機構: | Nanyang Technological University |
| 語言: | English |