Two-dimensional simulation and design of high electron mobility transistors

• Main Author: Kam, Adele Hwei Ting
• Other Authors: Yoon, Soon Fatt
• Format: Theses and Dissertations
• Language: English
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/13263
• Institution: Nanyang Technological University

The simulations are performed using the two-dimensional device simulator, MEDICI. To produce an accurate prediction of devices in this material system, the quaternary compounds formed between the GalnP and InGaAs interface needs to be accounted for. A model of these quaternary layers was incorporate...