Strategies to modulate Amorphous Oxide Semiconductor properties for low temperature transparent transistors

Amorphous Metal Oxide Semiconductors (AMOS) with properties such as high optical transparency, flexibility, and high electron mobility have emerged as a promising candidate over a-Si:H, poly-Si and organic semiconductor in the field of transparent and flexible electronics. However, the high processi...

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Bibliographic Details
Main Author: Kulkarni, Mohit Rameshchandra
Other Authors: Nripan Mathews
Format: Thesis-Doctor of Philosophy
Language:English
Published: Nanyang Technological University 2019
Subjects:
Online Access:https://hdl.handle.net/10356/136480
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Institution: Nanyang Technological University
Language: English

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