Strategies to modulate Amorphous Oxide Semiconductor properties for low temperature transparent transistors
Amorphous Metal Oxide Semiconductors (AMOS) with properties such as high optical transparency, flexibility, and high electron mobility have emerged as a promising candidate over a-Si:H, poly-Si and organic semiconductor in the field of transparent and flexible electronics. However, the high processi...
Saved in:
Main Author: | Kulkarni, Mohit Rameshchandra |
---|---|
Other Authors: | Nripan Mathews |
Format: | Thesis-Doctor of Philosophy |
Language: | English |
Published: |
Nanyang Technological University
2019
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/136480 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors
by: Tiwari, Nidhi, et al.
Published: (2020) -
Field-driven athermal activation of amorphous metal oxide semiconductors for flexible programmable logic circuits and neuromorphic electronics
by: Kulkarni, Mohit Rameshchandra, et al.
Published: (2020) -
Performance enhancement of transparent amorphous IGZO thin-film transistor realized by sputtered amorphous AlOx passivation layer
by: Li, Yuanbo, et al.
Published: (2022) -
Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor
by: Ong, K. K., et al.
Published: (2012) -
Indium tungsten oxide thin films for flexible high-performance transistors and neuromorphic electronics
by: Kulkarni, Mohit Rameshchandra, et al.
Published: (2019)