GeSn alloys fabricated by modified sputtering deposition

• المؤلف الرئيسي: Qian, Li
• مؤلفون آخرون: Fan Weijun
• التنسيق: Thesis-Doctor of Philosophy
• اللغة: English
• منشور في: Nanyang Technological University 2020
• الموضوعات: Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/137192

Direct band-gap semiconductors have always been an interest to the research community in the area of photonics and optoelectronics. Most commonly used group IV semiconductors such as silicon and germanium have shown their capabilities in the application of microelectronics, however, lack in breakthr...