GeSn alloys fabricated by modified sputtering deposition

• Main Author: Qian, Li
• Other Authors: Fan Weijun
• Format: Thesis-Doctor of Philosophy
• Language: English
• Published: Nanyang Technological University 2020
• Subjects: Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/137192
• Institution: Nanyang Technological University

Direct band-gap semiconductors have always been an interest to the research community in the area of photonics and optoelectronics. Most commonly used group IV semiconductors such as silicon and germanium have shown their capabilities in the application of microelectronics, however, lack in breakthr...