Self-heating and trapping effect in AlGaN/GaN high electron mobility transistors on CVD-diamond

• Main Author: Kumud Ranjan
• Other Authors: Ng Geok Ing
• Format: Thesis-Doctor of Philosophy
• Language: English
• Published: Nanyang Technological University 2020
• Subjects: Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/137690
• Institution: Nanyang Technological University

GaN-based high-electron-mobility Transistors (HEMTs) are widely used for high frequency, high voltage and high-power applications. However, there are still many major challenges facing these devices such as thermal management, size reduction and long-term reliable operation, especially when they are...