Field-driven athermal activation of amorphous metal oxide semiconductors for flexible programmable logic circuits and neuromorphic electronics

• Main Authors: Kulkarni, Mohit Rameshchandra, John, Rohit Abraham, Tiwari, Nidhi, Nirmal, Amoolya, Ng, Si En, Nguyen, Anh Chien, Mathews, Nripan
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; Engineering::Materials::Microelectronics and semiconductor materials; Field-driven Athermal Activation; Amorphous Metal Oxides
• Online Access: https://hdl.handle.net/10356/138083; https://doi.org/10.21979/N9/DWYGO3
• Institution: Nanyang Technological University

Despite extensive research, large-scale realization of metal-oxide electronics is still impeded by high-temperature fabrication, incompatible with flexible substrates. Ideally, an athermal treatment modifying the electronic structure of amorphous metal oxide semiconductors (AMOS) to generate suffici...