Impedance and parasitic capacitance analysis of SiC MOSFETs

• Main Author: Tan, Wei Jie
• Other Authors: Soong Boon Hee
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2020
• Subjects: Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/139204
• Institution: Nanyang Technological University

Power electronic systems have benefited tremendously in power discrete devices in the past ten years. In the year 1970s, MOSFETs, which are known as Metal–Oxide–Semiconductor Field-Effect Transistors, as well as Insulated Gate Bipolar Transistors (IGBTs) in the 1980s, significantly allowed designs o...