Impedance and parasitic capacitance analysis of SiC MOSFETs
Power electronic systems have benefited tremendously in power discrete devices in the past ten years. In the year 1970s, MOSFETs, which are known as Metal–Oxide–Semiconductor Field-Effect Transistors, as well as Insulated Gate Bipolar Transistors (IGBTs) in the 1980s, significantly allowed designs o...
Saved in:
Main Author: | Tan, Wei Jie |
---|---|
Other Authors: | Soong Boon Hee |
Format: | Final Year Project |
Language: | English |
Published: |
Nanyang Technological University
2020
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/139204 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes
by: Zeng, Zheng, et al.
Published: (2022) -
Methods for resolving the challenges of degradation diagnosis for SiC power MOSFET
by: Yang, Hui-Chen
Published: (2019) -
Experiment Result of High Frequency Switching SiC Mosfet Gate Driver
by: Kurniawan, Agta Wijaya, et al.
Published: (2022) -
Practical guidelines for device characterization and power converter design involving SiC MOSFETs
by: Yeo, Howe Li, et al.
Published: (2020) -
A generic gate driver for SiC MOSFETs with adjustable positive and negative rail voltage
by: Li, Yeo Howe, et al.
Published: (2020)