Impedance and parasitic capacitance analysis of SiC MOSFETs

Power electronic systems have benefited tremendously in power discrete devices in the past ten years. In the year 1970s, MOSFETs, which are known as Metal–Oxide–Semiconductor Field-Effect Transistors, as well as Insulated Gate Bipolar Transistors (IGBTs) in the 1980s, significantly allowed designs o...

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Bibliographic Details
Main Author: Tan, Wei Jie
Other Authors: Soong Boon Hee
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2020
Subjects:
Online Access:https://hdl.handle.net/10356/139204
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Institution: Nanyang Technological University
Language: English
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