Impedance and parasitic capacitance analysis of SiC MOSFETs

• المؤلف الرئيسي: Tan, Wei Jie
• مؤلفون آخرون: Soong Boon Hee
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2020
• الموضوعات: Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/139204

Power electronic systems have benefited tremendously in power discrete devices in the past ten years. In the year 1970s, MOSFETs, which are known as Metal–Oxide–Semiconductor Field-Effect Transistors, as well as Insulated Gate Bipolar Transistors (IGBTs) in the 1980s, significantly allowed designs o...