Oxide-based RRAM materials for neuromorphic computing

Oxide-based RRAM materials for neuromorphic computing

In this review, a comprehensive survey of different oxide-based resistive random-access memories (RRAMs) for neuromorphic computing is provided. We begin with the history of RRAM development, physical mechanism of conduction, fundamental of neuromorphic computing, followed by a review of a variety o...

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Bibliographic Details
Main Authors: Hong, XiaoLiang, Loy, Desmond JiaJun, Dananjaya, Putu Andhita, Tan, Funan, Ng, CheeMang, Lew, WenSiang
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
Subjects:
Science::Physics
Resistive Random-Access Memories (RRAMs)
Oxide Materials
Online Access:https://hdl.handle.net/10356/139668
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Institution: Nanyang Technological University
Language: English
Description
Summary:In this review, a comprehensive survey of different oxide-based resistive random-access memories (RRAMs) for neuromorphic computing is provided. We begin with the history of RRAM development, physical mechanism of conduction, fundamental of neuromorphic computing, followed by a review of a variety of RRAM oxide materials (PCMO, HfOx, TaOx, TiOx, NiOx, etc.) with a focus on their application for neuromorphic computing. Our goal is to give a broad review of oxide-based RRAM materials that can be adapted to neuromorphic computing and to help further ongoing research in the field.

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