Oxide-based RRAM materials for neuromorphic computing

• Main Authors: Hong, XiaoLiang, Loy, Desmond JiaJun, Dananjaya, Putu Andhita, Tan, Funan, Ng, CheeMang, Lew, WenSiang
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Science::Physics; Resistive Random-Access Memories (RRAMs); Oxide Materials
• Online Access: https://hdl.handle.net/10356/139668
• Institution: Nanyang Technological University

In this review, a comprehensive survey of different oxide-based resistive random-access memories (RRAMs) for neuromorphic computing is provided. We begin with the history of RRAM development, physical mechanism of conduction, fundamental of neuromorphic computing, followed by a review of a variety of RRAM oxide materials (PCMO, HfOx, TaOx, TiOx, NiOx, etc.) with a focus on their application for neuromorphic computing. Our goal is to give a broad review of oxide-based RRAM materials that can be adapted to neuromorphic computing and to help further ongoing research in the field.