Dynamic ON resistance study in GaN HEMT for high power switching application

• Main Author: Vidanagamage Uditha
• Other Authors: Ng Geok Ing
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2020
• Subjects: Engineering::Electrical and electronic engineering::Microelectronics; Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/139893
• Institution: Nanyang Technological University

Gallium Nitride based HEMT devices are very popularly used in high power switching applications, high frequency and high voltage applications. These devices have popular applications in radar technology, military and defense-based applications, cellular and wireless communication. Their ability to m...