Recent developments in spin transfer torque MRAM

• المؤلفون الرئيسيون: Sbiaa, Rachid, Piramanayagam, S. N.
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Science::Physics; Magnetic Random Access Memory; Multi-bit Per Cell
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/141806
• المؤسسة: Nanyang Technological University

Spin transfer torque (STT) switching‐based magnetic random access memory (MRAM) is gaining significant industrial and academic attention due to its potential application as a non‐volatile memory device in computing devices, smartphones, and so on. STT‐MRAM devices with in‐plane magnetization configu...