Recent developments in spin transfer torque MRAM
Spin transfer torque (STT) switching‐based magnetic random access memory (MRAM) is gaining significant industrial and academic attention due to its potential application as a non‐volatile memory device in computing devices, smartphones, and so on. STT‐MRAM devices with in‐plane magnetization configu...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/141806 |
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| Institution: | Nanyang Technological University |
| Language: | English |