Practical guidelines for device characterization and power converter design involving SiC MOSFETs

Practical guidelines for device characterization and power converter design involving SiC MOSFETs

SiC MOSFETs offer significant advantages over Si IGBTs in terms of power density and efficiency for power converter design. However, their fast switching speeds and limited short circuit current capability lead to issues during device characterization and converter design. In this paper, guidelines...

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Bibliographic Details
Main Authors: Yeo, Howe Li, Kanamarlapudi, Venkata Ravi Kishore
Other Authors: 2019 IEEE 4th International Future Energy Electronics Conference
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
SiC MOSFETs
Gate Drivers
Online Access:https://hdl.handle.net/10356/142862
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Institution: Nanyang Technological University
Language: English
Description
Summary:SiC MOSFETs offer significant advantages over Si IGBTs in terms of power density and efficiency for power converter design. However, their fast switching speeds and limited short circuit current capability lead to issues during device characterization and converter design. In this paper, guidelines for overcoming the practical issues of characterizing and designing with SiC MOSFETs are presented. A double pulse test setup and a SiC-based dual-active bridge are developed by incorporating the guidelines. Experimental results are obtained where applicable to illustrate the benefits of these guidelines.

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