Practical guidelines for device characterization and power converter design involving SiC MOSFETs
SiC MOSFETs offer significant advantages over Si IGBTs in terms of power density and efficiency for power converter design. However, their fast switching speeds and limited short circuit current capability lead to issues during device characterization and converter design. In this paper, guidelines...
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sg-ntu-dr.10356-1428622021-01-08T01:42:21Z Practical guidelines for device characterization and power converter design involving SiC MOSFETs Yeo, Howe Li Kanamarlapudi, Venkata Ravi Kishore 2019 IEEE 4th International Future Energy Electronics Conference Energy Research Institute @ NTU (ERI@N) Engineering::Electrical and electronic engineering SiC MOSFETs Gate Drivers SiC MOSFETs offer significant advantages over Si IGBTs in terms of power density and efficiency for power converter design. However, their fast switching speeds and limited short circuit current capability lead to issues during device characterization and converter design. In this paper, guidelines for overcoming the practical issues of characterizing and designing with SiC MOSFETs are presented. A double pulse test setup and a SiC-based dual-active bridge are developed by incorporating the guidelines. Experimental results are obtained where applicable to illustrate the benefits of these guidelines. Accepted version 2020-07-06T04:50:24Z 2020-07-06T04:50:24Z 2019 Conference Paper Yeo, H. L., & Kanamarlapudi, V. R. K. (2019). Practical guidelines for device characterization and power converter design involving SiC MOSFETs. doi:10.1109/IFEEC47410.2019.9015119 9781728131535 https://hdl.handle.net/10356/142862 10.1109/IFEEC47410.2019.9015119 2-s2.0-85082401417 en © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/IFEEC47410.2019.9015119. application/pdf |
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Nanyang Technological University |
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English |
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Engineering::Electrical and electronic engineering SiC MOSFETs Gate Drivers |
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Engineering::Electrical and electronic engineering SiC MOSFETs Gate Drivers Yeo, Howe Li Kanamarlapudi, Venkata Ravi Kishore Practical guidelines for device characterization and power converter design involving SiC MOSFETs |
| description |
SiC MOSFETs offer significant advantages over Si IGBTs in terms of power density and efficiency for power converter design. However, their fast switching speeds and limited short circuit current capability lead to issues during device characterization and converter design. In this paper, guidelines for overcoming the practical issues of characterizing and designing with SiC MOSFETs are presented. A double pulse test setup and a SiC-based dual-active bridge are developed by incorporating the guidelines. Experimental results are obtained where applicable to illustrate the benefits of these guidelines. |
| author2 |
2019 IEEE 4th International Future Energy Electronics Conference |
| author_facet |
2019 IEEE 4th International Future Energy Electronics Conference Yeo, Howe Li Kanamarlapudi, Venkata Ravi Kishore |
| format |
Conference or Workshop Item |
| author |
Yeo, Howe Li Kanamarlapudi, Venkata Ravi Kishore |
| author_sort |
Yeo, Howe Li |
| title |
Practical guidelines for device characterization and power converter design involving SiC MOSFETs |
| title_short |
Practical guidelines for device characterization and power converter design involving SiC MOSFETs |
| title_full |
Practical guidelines for device characterization and power converter design involving SiC MOSFETs |
| title_fullStr |
Practical guidelines for device characterization and power converter design involving SiC MOSFETs |
| title_full_unstemmed |
Practical guidelines for device characterization and power converter design involving SiC MOSFETs |
| title_sort |
practical guidelines for device characterization and power converter design involving sic mosfets |
| publishDate |
2020 |
| url |
https://hdl.handle.net/10356/142862 |
| _version_ |
1688665268795998208 |