Practical guidelines for device characterization and power converter design involving SiC MOSFETs

Practical guidelines for device characterization and power converter design involving SiC MOSFETs

SiC MOSFETs offer significant advantages over Si IGBTs in terms of power density and efficiency for power converter design. However, their fast switching speeds and limited short circuit current capability lead to issues during device characterization and converter design. In this paper, guidelines...

Full description

Saved in:
Bibliographic Details
Main Authors: Yeo, Howe Li, Kanamarlapudi, Venkata Ravi Kishore
Other Authors: 2019 IEEE 4th International Future Energy Electronics Conference
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
SiC MOSFETs
Gate Drivers
Online Access:https://hdl.handle.net/10356/142862
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-142862
record_format dspace
spelling sg-ntu-dr.10356-1428622021-01-08T01:42:21Z Practical guidelines for device characterization and power converter design involving SiC MOSFETs Yeo, Howe Li Kanamarlapudi, Venkata Ravi Kishore 2019 IEEE 4th International Future Energy Electronics Conference Energy Research Institute @ NTU (ERI@N) Engineering::Electrical and electronic engineering SiC MOSFETs Gate Drivers SiC MOSFETs offer significant advantages over Si IGBTs in terms of power density and efficiency for power converter design. However, their fast switching speeds and limited short circuit current capability lead to issues during device characterization and converter design. In this paper, guidelines for overcoming the practical issues of characterizing and designing with SiC MOSFETs are presented. A double pulse test setup and a SiC-based dual-active bridge are developed by incorporating the guidelines. Experimental results are obtained where applicable to illustrate the benefits of these guidelines. Accepted version 2020-07-06T04:50:24Z 2020-07-06T04:50:24Z 2019 Conference Paper Yeo, H. L., & Kanamarlapudi, V. R. K. (2019). Practical guidelines for device characterization and power converter design involving SiC MOSFETs. doi:10.1109/IFEEC47410.2019.9015119 9781728131535 https://hdl.handle.net/10356/142862 10.1109/IFEEC47410.2019.9015119 2-s2.0-85082401417 en © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/IFEEC47410.2019.9015119. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
SiC MOSFETs
Gate Drivers
spellingShingle Engineering::Electrical and electronic engineering
SiC MOSFETs
Gate Drivers
Yeo, Howe Li
Kanamarlapudi, Venkata Ravi Kishore
Practical guidelines for device characterization and power converter design involving SiC MOSFETs
description SiC MOSFETs offer significant advantages over Si IGBTs in terms of power density and efficiency for power converter design. However, their fast switching speeds and limited short circuit current capability lead to issues during device characterization and converter design. In this paper, guidelines for overcoming the practical issues of characterizing and designing with SiC MOSFETs are presented. A double pulse test setup and a SiC-based dual-active bridge are developed by incorporating the guidelines. Experimental results are obtained where applicable to illustrate the benefits of these guidelines.
author2 2019 IEEE 4th International Future Energy Electronics Conference
author_facet 2019 IEEE 4th International Future Energy Electronics Conference
Yeo, Howe Li
Kanamarlapudi, Venkata Ravi Kishore
format Conference or Workshop Item
author Yeo, Howe Li
Kanamarlapudi, Venkata Ravi Kishore
author_sort Yeo, Howe Li
title Practical guidelines for device characterization and power converter design involving SiC MOSFETs
title_short Practical guidelines for device characterization and power converter design involving SiC MOSFETs
title_full Practical guidelines for device characterization and power converter design involving SiC MOSFETs
title_fullStr Practical guidelines for device characterization and power converter design involving SiC MOSFETs
title_full_unstemmed Practical guidelines for device characterization and power converter design involving SiC MOSFETs
title_sort practical guidelines for device characterization and power converter design involving sic mosfets
publishDate 2020
url https://hdl.handle.net/10356/142862
_version_ 1688665268795998208

Similar Items