Practical guidelines for device characterization and power converter design involving SiC MOSFETs
SiC MOSFETs offer significant advantages over Si IGBTs in terms of power density and efficiency for power converter design. However, their fast switching speeds and limited short circuit current capability lead to issues during device characterization and converter design. In this paper, guidelines...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/142862 |
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| Institution: | Nanyang Technological University |
| Language: | English |