Practical guidelines for device characterization and power converter design involving SiC MOSFETs

• المؤلفون الرئيسيون: Yeo, Howe Li, Kanamarlapudi, Venkata Ravi Kishore
• مؤلفون آخرون: 2019 IEEE 4th International Future Energy Electronics Conference
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; SiC MOSFETs; Gate Drivers
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/142862

SiC MOSFETs offer significant advantages over Si IGBTs in terms of power density and efficiency for power converter design. However, their fast switching speeds and limited short circuit current capability lead to issues during device characterization and converter design. In this paper, guidelines...