Resistive RAM endurance : array-level characterization and correction techniques targeting deep learning applications

• المؤلفون الرئيسيون: Grossi, Alessandro, Vianello, Elisa, Mohamed M. Sabry, Barlas, Marios, Grenouillet, Laurent, Coignus, Jean, Beigne, Edith, Wu, Tony, Le, Binh Q, Wootters, Mary K., Zambelli, Cristian, Nowak, Etienne, Mitra, Subhasish
• مؤلفون آخرون: School of Computer Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Computer science and engineering; Characterization; Deep Learning
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/143255
• المؤسسة: Nanyang Technological University

Limited endurance of resistive RAM (RRAM) is a major challenge for future computing systems. Using thorough endurance tests that incorporate fine-grained read operations at the array level, we quantify for the first time temporary write failures (TWFs) caused by intrinsic RRAM cycle-to-cycle and cel...