Rhenium diselenide (ReSe2) near-infrared photodetector : performance enhancement by selective p-doping technique
In this study, a near-infrared photodetector featuring a high photoresponsivity and a short photoresponse time is demonstrated, which is fabricated on rhenium diselenide (ReSe2) with a relatively narrow bandgap (0.9-1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excell...
Saved in:
Main Authors: | , , , , , , |
---|---|
其他作者: | |
格式: | Article |
語言: | English |
出版: |
2020
|
主題: | |
在線閱讀: | https://hdl.handle.net/10356/143398 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
機構: | Nanyang Technological University |
語言: | English |