Rhenium diselenide (ReSe2) near-infrared photodetector : performance enhancement by selective p-doping technique

In this study, a near-infrared photodetector featuring a high photoresponsivity and a short photoresponse time is demonstrated, which is fabricated on rhenium diselenide (ReSe2) with a relatively narrow bandgap (0.9-1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excell...

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Bibliographic Details
Main Authors: Kim, Jinok, Heo, Keun, Kang, Dong-Ho, Shin, Changhwan, Lee, Sungjoo, Yu, Hyun-Yong, Park, Jin-Hong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
Subjects:
Online Access:https://hdl.handle.net/10356/143398
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Institution: Nanyang Technological University
Language: English
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