Rhenium diselenide (ReSe2) near-infrared photodetector : performance enhancement by selective p-doping technique

• المؤلفون الرئيسيون: Kim, Jinok, Heo, Keun, Kang, Dong-Ho, Shin, Changhwan, Lee, Sungjoo, Yu, Hyun-Yong, Park, Jin-Hong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; HCl Doping; P-doping
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/143398

In this study, a near-infrared photodetector featuring a high photoresponsivity and a short photoresponse time is demonstrated, which is fabricated on rhenium diselenide (ReSe2) with a relatively narrow bandgap (0.9-1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excell...