Rhenium diselenide (ReSe2) near-infrared photodetector : performance enhancement by selective p-doping technique
In this study, a near-infrared photodetector featuring a high photoresponsivity and a short photoresponse time is demonstrated, which is fabricated on rhenium diselenide (ReSe2) with a relatively narrow bandgap (0.9-1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excell...
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sg-ntu-dr.10356-1433982020-08-31T02:06:44Z Rhenium diselenide (ReSe2) near-infrared photodetector : performance enhancement by selective p-doping technique Kim, Jinok Heo, Keun Kang, Dong-Ho Shin, Changhwan Lee, Sungjoo Yu, Hyun-Yong Park, Jin-Hong School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering HCl Doping P-doping In this study, a near-infrared photodetector featuring a high photoresponsivity and a short photoresponse time is demonstrated, which is fabricated on rhenium diselenide (ReSe2) with a relatively narrow bandgap (0.9-1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excellent photo and temporal responses, which generally show a trade-off relation, are achieved simultaneously by applying a p-doping technique based on hydrochloric acid (HCl) to a selected ReSe2 region. Because the p-doping of ReSe2 originates from the charge transfer from un-ionized Cl molecules in the HCl to the ReSe2 surface, by adjusting the concentration of the HCl solution from 0.1 to 10 m, the doping concentration of the ReSe2 is controlled between 3.64 × 1010 and 3.61 × 1011 cm-2. Especially, the application of the selective HCl doping technique to the ReSe2 photodetector increases the photoresponsivity from 79.99 to 1.93 × 103 A W-1, and it also enhances the rise and decay times from 10.5 to 1.4 ms and from 291 to 3.1 ms, respectively, compared with the undoped ReSe2 device. The proposed selective p-doping technique and its fundamental analysis will provide a scientific foundation for implementing high-performance TMD-based electronic and optoelectronic devices. Published version 2020-08-31T02:06:44Z 2020-08-31T02:06:44Z 2019 Journal Article Kim, J., Heo, K., Kang, D.-H., Shin, C., Lee, S., Yu, H.-Y., & Park, J.-H. (2019). Rhenium diselenide (ReSe2) near-infrared photodetector : performance enhancement by selective p-doping technique. Advanced Science, 6(21), 1901255-. doi:10.1002/advs.201901255 2198-3844 https://hdl.handle.net/10356/143398 10.1002/advs.201901255 31728284 2-s2.0-85071261542 21 6 en Advanced Science © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. application/pdf |
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Engineering::Electrical and electronic engineering HCl Doping P-doping Kim, Jinok Heo, Keun Kang, Dong-Ho Shin, Changhwan Lee, Sungjoo Yu, Hyun-Yong Park, Jin-Hong Rhenium diselenide (ReSe2) near-infrared photodetector : performance enhancement by selective p-doping technique |
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In this study, a near-infrared photodetector featuring a high photoresponsivity and a short photoresponse time is demonstrated, which is fabricated on rhenium diselenide (ReSe2) with a relatively narrow bandgap (0.9-1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excellent photo and temporal responses, which generally show a trade-off relation, are achieved simultaneously by applying a p-doping technique based on hydrochloric acid (HCl) to a selected ReSe2 region. Because the p-doping of ReSe2 originates from the charge transfer from un-ionized Cl molecules in the HCl to the ReSe2 surface, by adjusting the concentration of the HCl solution from 0.1 to 10 m, the doping concentration of the ReSe2 is controlled between 3.64 × 1010 and 3.61 × 1011 cm-2. Especially, the application of the selective HCl doping technique to the ReSe2 photodetector increases the photoresponsivity from 79.99 to 1.93 × 103 A W-1, and it also enhances the rise and decay times from 10.5 to 1.4 ms and from 291 to 3.1 ms, respectively, compared with the undoped ReSe2 device. The proposed selective p-doping technique and its fundamental analysis will provide a scientific foundation for implementing high-performance TMD-based electronic and optoelectronic devices. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Kim, Jinok Heo, Keun Kang, Dong-Ho Shin, Changhwan Lee, Sungjoo Yu, Hyun-Yong Park, Jin-Hong |
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Article |
author |
Kim, Jinok Heo, Keun Kang, Dong-Ho Shin, Changhwan Lee, Sungjoo Yu, Hyun-Yong Park, Jin-Hong |
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Kim, Jinok |
title |
Rhenium diselenide (ReSe2) near-infrared photodetector : performance enhancement by selective p-doping technique |
title_short |
Rhenium diselenide (ReSe2) near-infrared photodetector : performance enhancement by selective p-doping technique |
title_full |
Rhenium diselenide (ReSe2) near-infrared photodetector : performance enhancement by selective p-doping technique |
title_fullStr |
Rhenium diselenide (ReSe2) near-infrared photodetector : performance enhancement by selective p-doping technique |
title_full_unstemmed |
Rhenium diselenide (ReSe2) near-infrared photodetector : performance enhancement by selective p-doping technique |
title_sort |
rhenium diselenide (rese2) near-infrared photodetector : performance enhancement by selective p-doping technique |
publishDate |
2020 |
url |
https://hdl.handle.net/10356/143398 |
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1681059793678106624 |