Dielectric dispersion and superior thermal characteristics in isotope-enriched hexagonal boron nitride thin films : evaluation as thermally self-dissipating dielectrics for GaN transistors
High performance tuneable dielectrics at millimetre-wave frequencies are crucial constituents for emerging adaptive and reconfigurable electronic applications in the automotive, artificial intelligence, and telecommunication industries. Hexagonal boron nitride (h-BN), an ideal candidate for gate-ins...
Saved in:
Main Authors: | Chng, Soon Siang, Zhu, Minmin, Du, Zehui, Wang, Xizu, Whiteside, Matthew, Ng, Zhi Kai, Shakerzadeh, Maziar, Tsang, Siu Hon, Teo, Edwin Hang Tong |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2020
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/144531 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy
by: Méchin, Loïc, et al.
Published: (2024) -
Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation
by: Liu, D., et al.
Published: (2022) -
Vertically self-ordered orientation of nanocrystalline hexagonal boron nitride thin films for enhanced thermal characteristics
by: Cometto, Olivier, et al.
Published: (2018) -
Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
by: Qian, Haisheng, et al.
Published: (2020) -
Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures
by: Lingaparthi, R., et al.
Published: (2021)