A 40 GHz on-chip power combine load for mm-wave power amplifier

A 40 GHz on-chip power combine load for mm-wave power amplifier

Millimeter‐wave (Mm‐Wave) communication have been considered as one of the most potential candidate of the 5th generation communication (5G). However, the low breakdown voltage of CMOS challenges RF circuits design in various aspects especially for power amplifier (PA). The maximum available power f...

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書目詳細資料
Main Authors:	Lin, Jiafu, Zhang, Gary, Boon, Chirn Chye
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2020
主題:	Engineering::Electrical and electronic engineering CMOS PA Isolation
在線閱讀:	https://hdl.handle.net/10356/144858
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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