Systematic study on photoexcited carrier dynamics related to defects in GeSn Films with low Sn content at room temperature

• Main Authors: Son, Bongkwon, Zhang, Lin, Jung, Yongduck, Zhou, Hao, Nam, Donguk, Tan, Chuan Seng
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2021
• 主題: Engineering::Electrical and electronic engineering::Semiconductors; GeSn Alloy; Silicon Photonics; Optoelectronic Integration
• 在線閱讀: https://hdl.handle.net/10356/153005
• 機構: Nanyang Technological University

Germanium-Tin (GeSn) alloys have received much attention thanks to their optical/electrical properties and their operation in the mid-infrared range. However, dislocations/defects in GeSn films serve as trap states, limiting radiative recombination/generation via band-edges. In this work, the imp...