Systematic study on photoexcited carrier dynamics related to defects in GeSn Films with low Sn content at room temperature

• Main Authors: Son, Bongkwon, Zhang, Lin, Jung, Yongduck, Zhou, Hao, Nam, Donguk, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; GeSn Alloy; Silicon Photonics; Optoelectronic Integration
• Online Access: https://hdl.handle.net/10356/153005
• Institution: Nanyang Technological University

Germanium-Tin (GeSn) alloys have received much attention thanks to their optical/electrical properties and their operation in the mid-infrared range. However, dislocations/defects in GeSn films serve as trap states, limiting radiative recombination/generation via band-edges. In this work, the imp...