2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure

• المؤلف الرئيسي: Patwal, Shashank
• مؤلفون آخرون: Radhakrishnan K
• التنسيق: Thesis-Doctor of Philosophy
• اللغة: English
• منشور في: Nanyang Technological University 2021
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/153068

Over the last couple of decades, GaN-based materials have emerged as promising candidates for high power and high-frequency devices. This can be attributed to their unique and attractive properties such as wide range of bandgap, high saturation velocity, spontaneous and piezoelectric polarization, a...