2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure

• 主要作者: Patwal, Shashank
• 其他作者: Radhakrishnan K
• 格式: Thesis-Doctor of Philosophy
• 語言: English
• 出版: Nanyang Technological University 2021
• 主題: Engineering::Electrical and electronic engineering::Semiconductors; Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: https://hdl.handle.net/10356/153068

Over the last couple of decades, GaN-based materials have emerged as promising candidates for high power and high-frequency devices. This can be attributed to their unique and attractive properties such as wide range of bandgap, high saturation velocity, spontaneous and piezoelectric polarization, a...