Barrier layers for copper metallization

• Main Author: Boo, Liping.
• Other Authors: Thirumany Sritharan
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: http://hdl.handle.net/10356/15335
• Institution: Nanyang Technological University

Semiconductor device miniaturization as proposed by Moore’s law, results in the demand for new materials to replace Aluminium (Al) interconnect for such devices. Copper (Cu) was chosen as the new interconnect and so barrier layers like Ta/TaN suitable for Al interconnect can no longer work efficient...