Comprehensive study of side-channel attack on emerging non-volatile memories

• Main Authors: Khan, Mohammad Nasim Imtiaz, Bhasin Shivam, Liu, Bo, Yuan, Alex, Chattopadhyay Anupam, Ghosh, Swaroop
• Other Authors: School of Computer Science and Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Computer science and engineering; Spin-Transfer Torque RAM; Magnetic RAM
• Online Access: https://hdl.handle.net/10356/153959
• Institution: Nanyang Technological University

Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance. However, these memories bring new threats to data security. In this paper, we investigate their vulnerability against Side Channel Attack (SCA). We assume that the adversary can monitor the supply current of the memory array consumed during read/write operations and recover the secret key of Advanced Encryption Standard (AES) execution. First, we show our analysis of simulation results. Then, we use commercial NVM chips to validate the analysis. We also investigate the effectiveness of encoding against SCA on emerging NVMs. Finally, we summarize two new flavors of NVMs that can be resilient against SCA. To the best of our knowledge, this is the first attempt to do a comprehensive study of SCA vulnerability of the majority of emerging NVM-based cache.