Comprehensive study of side-channel attack on emerging non-volatile memories

Comprehensive study of side-channel attack on emerging non-volatile memories

Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance. However, these memories bring new threats to d...

Full description

Saved in:
Bibliographic Details
Main Authors: Khan, Mohammad Nasim Imtiaz, Bhasin Shivam, Liu, Bo, Yuan, Alex, Chattopadhyay Anupam, Ghosh, Swaroop
Other Authors: School of Computer Science and Engineering
Format: Article
Language:English
Published: 2022
Subjects:
Engineering::Computer science and engineering
Spin-Transfer Torque RAM
Magnetic RAM
Online Access:https://hdl.handle.net/10356/153959
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/153959

Similar Items