Comprehensive study of side-channel attack on emerging non-volatile memories

• Main Authors: Khan, Mohammad Nasim Imtiaz, Bhasin Shivam, Liu, Bo, Yuan, Alex, Chattopadhyay Anupam, Ghosh, Swaroop
• Other Authors: School of Computer Science and Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Computer science and engineering; Spin-Transfer Torque RAM; Magnetic RAM
• Online Access: https://hdl.handle.net/10356/153959
• Institution: Nanyang Technological University

Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance. However, these memories bring new threats to d...