In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications

• المؤلفون الرئيسيون: Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, Manvi
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering; Ammonia; Molecular Beam Epitaxy
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/154381

In-situ stress evolution as a function of thickness has been investigated and correlated with the structural properties and surface morphology of GaN buffer layer grown on AlGaN/AlN/GaN stress mitigating layers (SMLs). For comparison, GaN buffer was also grown on AlN/GaN SMLs. AlGaN/AlN/GaN SMLs exh...